Description
The KOKUSAI CXP-544A KOMS-A2is a high-precision Mass Flow Controller (MFC) designed specifically for semiconductor fabrication equipment, particularly Kokusai’s renowned vertical diffusion furnaces and chemical vapor deposition (CVD) systems. This critical component is responsible for the precise measurement and control of process gases, enabling the accurate formation of thin films on silicon wafers. Its core function is to maintain a stable, predetermined gas flow rate regardless of fluctuations in upstream or downstream pressure, which is a fundamental requirement for achieving consistent deposition thickness and film properties.As an integral part of the Kokusai gas delivery system, the CXP-544A KOMS-A2ensures that the precise gas chemistry required for processes like atmospheric pressure CVD (APCVD) or low-pressure CVD (LPCVD) is consistently maintained. The value of the KOKUSAI CXP-544A KOMS-A2lies in its direct impact on wafer yield and device performance. By providing exceptional control over gas flows, it enables the reproducible creation of ultra-thin layers with exact electrical and structural characteristics, which is essential for manufacturing advanced semiconductors. The reliability of the KOKUSAI CXP-544A KOMS-A2is paramount for minimizing process variation and ensuring high tool uptime in a 24/7 manufacturing environment.
KOKUSAI CXP-544A KOMS-A2
Technical Specifications
| Parameter Name | Parameter Value |
| Product Model | CXP-544A KOMS-A2 |
| Manufacturer | Kokusai Electric (KOKUSAI) |
| Product Type | Mass Flow Controller (MFC) |
| Compatible Tool Series | Kokusai Vertical Diffusion/CVD Furnaces |
| Flow Rate Range | Model-specific (e.g., 0-500 sccm for a typical process gas) |
| Accuracy | Typically ±1.0% of Full Scale or better |
| Repeatability | Typically ±0.5% of Full Scale or better |
| Response Time | Typically < 2> |
| Control Signal | Analog (e.g., 0-5 VDC) or Digital (e.g., DeviceNet) |
| Gas Compatibility | Specific to process gases (e.g., SiH4, N2, O2, PH3) |
| Pressure Rating | Suitable for low-pressure CVD applications |
| Seal Material | Vacuum-compatible seals (e.g., Kalrez, Viton) |
Main Features and Advantages
The primary advantage of the KOKUSAI CXP-544A KOMS-A2is its exceptional measurement and control accuracy. This is achieved through a sophisticated design that typically includes a thermal sensor for flow measurement and a proportional control valve. The internal microprocessor continuously compares the measured flow to the setpoint and adjusts the valve position with high speed and precision. This closed-loop control is vital for processes where the exact ratio of gases determines the chemical composition and quality of the deposited film. The high repeatability of the CXP-544A KOMS-A2ensures that identical process recipes run weeks or months apart will produce wafers with the same critical dimensions.Durability and process-specific engineering are key differentiators. The KOKUSAI CXP-544A KOMS-A2is built to handle the aggressive and often hazardous gases used in semiconductor manufacturing. The wetted materials are selected for high corrosion resistance, and the design minimizes dead volumes where gases can stagnate. Furthermore, its calibration is optimized for specific gas types, ensuring maximum accuracy. The unit is designed for easy integration into the tool’s gas stick, and many versions feature digital communication for advanced diagnostics, remote setpoint adjustment, and predictive maintenance capabilities, allowing fab engineers to monitor the health and performance of the gas delivery system proactively.
KOKUSAI CXP-544A KOMS-A2
Application Field
The KOKUSAI CXP-544A KOMS-A2is exclusively applied in the semiconductor industry, within the wafer fabrication process. Its primary application is in Kokusai vertical diffusion furnaces used for thermal processes such as oxidation, diffusion, doping, and especially Chemical Vapor Deposition (CVD). In a CVD process, the KOKUSAI CXP-544A KOMS-A2controls the flow of precursor gases (e.g., silane for polysilicon deposition, TEOS for silicon dioxide deposition) and dopant gases into the high-temperature furnace tube where wafers are processed.This application is critical for defining the electrical properties of the semiconductor devices. For instance, in the deposition of a gate oxide layer, a minute variation in the oxygen-to-precursor gas ratio controlled by the CXP-544A KOMS-A2can alter the oxide thickness and integrity, directly impacting transistor performance and reliability. In a high-volume memory chip production line, the consistent performance of hundreds of such MFCs across multiple tools is essential for achieving high yields. The KOKUSAI CXP-544A KOMS-A2addresses the core challenge of process control at the atomic level, making it a cornerstone of modern semiconductor manufacturing.
Related Products
KOKUSAI CXP-xxx Series:Other MFC models from the same series for different gas types or flow ranges.
KOKUSAI Gas Valve Manifold:The assembly panel where multiple CXP-544A KOMS-A2units are mounted.
KOKUSAI Diffusion Furnace:The main processing tool (e.g., AXD, FHD series) that this MFC serves.
KOKUSAI Temperature Controller:The module that controls the furnace tube temperature in conjunction with gas flow.
KOKUSAI APC (Adaptive Pressure Controller):Works with the MFC to maintain precise pressure during LPCVD.



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