Description
The ABB 5SHX1445H0002 3BHL000387P0101 constitutes an advanced-generation Integrated Gate-Commutated Thyristor (IGCT) power stack and matched gate driver solution, engineered for ultra-high-power industrial drives exceeding 20MW. This integrated system combines ABB’s fourth-generation 4.5kV asymmetric blocking IGCT semiconductor with the intelligent 3BHL000387P0101 gate unit, delivering 15% higher power density than previous iterations. Designed for ACS 6000 and ACS 6080 drive platforms, the 5SHX1445H0002 features enhanced press-pack technology with copper-molybdenum composite electrodes that reduce thermal resistance by 18% while maintaining 40kA surge withstand capability. The hermetic ceramic-metal housing provides complete immunity to humidity and contaminants, enabling deployment in harsh environments like offshore platforms and desert mining operations.
Optimized for multi-level converter topologies, the ABB 5SHX1445H0002 3BHL000387P0101 achieves breakthrough switching efficiency with <4>

ABB 5SHX1445H0002 3BHL000387P0101
Technical Specifications
| Parameter Name | Parameter Value |
| Product Model | 5SHX1445H0002 3BHL000387P0101 |
| Manufacturer | ABB |
| Product Type | Press-Pack IGCT Power Stack with Gate Driver |
| Blocking Voltage | 4.5 kV (Asymmetric) |
| Nominal Current | 2,500 A RMS |
| Max Surge Current | 45 kA (1 ms half-sine) |
| Switching Frequency | 600 Hz (Maximum) |
| Turn-off Time | <4> |
| Gate Unit Supply | 24V DC ±0.5% (Triple-redundant) |
| Control Interface | 2x 820 nm Redundant Optical Channels |
| Thermal Resistance | 0.012 K/W (Junction-to-coolant) |
| Cooling Requirement | Direct Deionized Water: 10 L/min @ ΔT=35K |
| Operating Temperature | -40°C to +150°C (Junction) |
| Short-Circuit Withstand | 10 μs (Full voltage) |
| Dimensions (Stack) | 230 × 152 × 54 mm (W × H × D) |
| Weight | 9.1 kg |
Main Features and Advantages
Enhanced Power Density: The redesigned press-pack architecture increases current capacity by 25% over the 5SHX1445H0001, while maintaining identical footprint. Molybdenum-reinforced electrodes enable junction temperatures up to 150°C for overload scenarios.
Intelligent Protection: The 3BHL000387P0101 gate unit features embedded DSP diagnostics that monitor:
Real-time junction temperature via optical sensors
Gate driver health with μs-level fault detection
Coolant flow rate and contamination levels
Asymmetric current distribution between parallel stacks
Fault-Tolerant Operation: Triple-redundant optical control paths ensure continuous operation during single-channel failure. Active voltage clamping protects against overvoltage transients >5.2kV. The “soft-failure” design prevents catastrophic short-circuit during end-of-life degradation.
Maintenance Optimization: Front-mounted hot-swappable fiber connectors enable gate unit replacement without power-down. QR-coded identification tags auto-configure drive parameters upon installation.
Environmental Robustness: Seismic certification to IEEE 693 High Level (5g) and IP67-equivalent sealing for coal-dust environments. Halogen-free materials comply with IEC 61249-2-21.
Application Field
The ABB 5SHX1445H0002 3BHL000387P0101 dominates ultra-high-power conversion applications requiring maximum availability:
Energy & Infrastructure:
HVDC converter valves for grid interconnections
100+ MVAR STATCOM systems for voltage stabilization
Inertia emulation in renewable energy plants
Heavy Industry:
Twin-drive rolling mills (>35MW) with rapid torque reversals
Mine hoists with 3000m depth capability
Gigawatt-scale compressor trains for LNG liquefaction
Transportation & Marine:
Podded propulsion drives for ice-class vessels
Electrification of large-scale port cranes
Railway traction power converters
Test Systems:
30MW nacelle test benches for offshore wind turbines
High-energy physics power supplies (fusion reactors)

ABB 5SHX1445H0002 3BHL000387P0101
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